| 摘要 |
PURPOSE:To obtain a metal silicide target having high density and purity, by isotropically compressing a mixture of metal powder and Si powder in cold state, melting the formed electrode by the vacuum plasma smelting process, and coagulating the molten mixture. CONSTITUTION:A mixture of metal powder (e.g. Mo powder having a purity of 99.99%) and Si powder is subjected to the isotropic cold compression to form an electrode 1. The electrode 1 is melted by the vacuum plasma smelting process, and dripped continuously into a water-cooled copper mold 2 to effect the coagulation of the molten mixture and obtain the ingot 3 of metal silicide target. |
