| 摘要 |
PURPOSE:To enable to form a microscopic line conductor in a semiconductor integrated circuit by a method wherein a part of the second layer in the recessed pattern is left, the exposed first layer in the recessed pattern is removed and the residual part of the second layer and the initial layer in the recessed pattern are removed. CONSTITUTION:A part of a photo resist layer 10 is removed from a region 12, where a pattern is to be demarcated, on the surface of a substrate 14, an anisotropic etching is performed on a part of an insulating layer 16 and an inside bending profile 18 is obtained. A conductive material layer 20 is coated on the photo resist layer 10 and a gap 22 is formed. Then, a comparatively thick flattening material layer 24 like the photo resist layer is extendedly provided on the surface, the flattening material layer 24 is uniformly removed until the top part 26 of the conductive layer on the patterned photo resist layer is made to expose, and a flattening material region 28 to cover the part of a conductive layer 30 in the recessed pattern region is left. Then, the conductive layer 20 is selectively removed by performing an anisotropic etching. The flattening material region 28 protects the patterned region from being subjected to an etching. By this way, a microscopic line conductor can be formed in the semiconductor circuit.
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