| 摘要 |
PURPOSE:To uniformize the film thickness distribution, and to improve the uniformity of a film, by placing a square reaction tube and a susceptor having specific form near the part to hold a substrate crystal, and enabling the uniform downward flow of the reaction gas to the upper layer of the crystal. CONSTITUTION:A square reaction tube 31 is placed near the part where the substrate crystal 11 to be subjected to epitaxial growth is placed. The reaction tube 31 has rectangular cross-section, a bottom part inclined upward toward the flowing direction of the reaction gas, and a coolable structure. A susceptor 20 holding a substrate crystal 11 is placed downstream side of the reaction tube 31, and the upper face of the susceptor 20 is positioned to the same level as the bottom of the reaction tube 31. The flow of the reaction gas can be uniformized by the above apparatus without being disturbed with the susceptor 20, and a uniform film can be produced. |
