| 摘要 |
PURPOSE:To enable to make high sensitive and minute easily, by constituting a pixel by a static induction transistor (SIT) having a MOS gate structure which has potential barrier vertically to the surface of a semiconductor substrate and which is formed on the semiconductor substrate surface. CONSTITUTION:A SIT11 is provided with an N<+> drain diffusion layer 18 formed on the back face of an N<-> or intrinsic semiconductor substrate 12, and a MOS gate structure comprising of an N<+> source diffusion layer 13 formed circularly on the surface of the substrate 12, a source electrode 14 joined with the source diffusion layer 13, an ion implanted layer 16 which is formed by ion-implanting P-type impurities in a ring shape so as to enclose the N<+> source diffusion layer 13, from above the gate insulating film 15 toward the substrate 12, and a ring gate electrode 17 made of polysilicon, SnO2, or ITO, etc. formed on the surface of the gate insulating film 15 and just above the ion implanted layer 16 so as to enclose the source diffusion layer 13. Thus, among the source, gate and drain, a self alignment process can be applied, and the minute device can be produced. |
