| 摘要 |
PURPOSE:To enable to perform microscopic work on an electrode and a wiring using a wet etching method at low cost with good productivity by a method wherein, after a thin film to be made into an electrode and a wiring pattern has been formed, a semiconductor substrate is dipped into an organic solvent or exposed to the atmosphere of the organic solvent, and then the thin film is dried up by heating. CONSTITUTION:A thin film 3 is formed on the insulating film 2 of SiO2 and the like provided on a semiconductor substrate 1, a positive type resist is coated on the thin film 3, and a positive type resist pattern 4 is formed by performing a series of photolithographic processes such as mask matching, exposure, developing and the like. At this time, innumerable traces of broken-out gas generated by optical reaction or thermal decomposition of the composition of the resist pattern 4 are left between the resist pattern 4 and the thin film 3 as air gaps 5, 5.... Then, the treatment such as dipping the above-mentioned material into an organic solvent or exposing it to the atmosphere of said solvent and the like is performed. Subsequently, a heat drying process is performed, the resist pattern 4 is sufficiently deformed by the heat of said drying process, and the air gaps 5, 5... are filled up. |
