| 摘要 |
PURPOSE:To enable to easily impress bias voltage on the substrate of a semiconductor element and to contrive to simplify the wiring of the element by a method wherein plural pieces of electrodes for substrate bias impression are formed on the surface of the semiconductor chip, and at the same time, plural pieces of the inner leads, which are connected to plural pieces of the electrodes, are made to mutually short-circuit. CONSTITUTION:Plural bump electrodes 2, 2... for substrate bias impression are equally formed on the surface of a semiconductor chip 1, which is arranged on the film carrier substrate, and inner leads 3, 3..., which are connected to the bump electrodes 2, 2..., are made to mutually short-circuit by a short-circuit pattern 11. Just one inner lead 31 among the inner leads 3, 3... short-circuited is used as the inner lead for external electrode lead-out and any of the other inner leads 3, 3... are made in such a way as not to be led out as the external electrode. In this case, the inner leads 3, 3... are made to mutually short-circuit with just modifying the film carrier pattern forming master and such troubles as an increase in the number of the film carrier forming processes and a complication of the wiring are not generated. By this way, bias voltage can be equally impressed on the whole semiconductor element without being biased, and moreover, the number of the connecting wires to be connected with the bias power source can be done with just one wire and the wiring does not become a complicated one. |
