| 摘要 |
PURPOSE:To enable to perform an aging on a semiconductor integrated circuit assembled on a film carrier by a method wherein an aging device, wherein linear metal electrodes are formed, and the film carrier device, which is made into such a structure that the wirings of the outer leads are extended from the first pads and the second pads are provided on the points of the outer leads, are assembled together. CONSTITUTION:In the film carrier device, the second outer leads 13 are extended from the first pads 12 and the second pads 14 are provided on the points thereof. The second pads 14 are arranged in such a way as to form a column linearly to the longitudinal direction of the film 1. On the other hand, the aging device 20 is constituted of a flexible insulator and grooves 25, wherein the film 1 of the film carrier device is inserted, are formed in the aging device 20, and at the same time, metal electrodes 21-24 to correspond to the second pads 14 formed on the film 1 are formed in the grooves 25 as the linear electrodes. The metal electrodes 21-24 are provided at the positions to coincide with lines L1-L4. By forming the aging device 20 in such a way, the film 1 is inserted in the aging device 20 and both can be combined in one body. |
