| 摘要 |
PURPOSE:To enable to easily form an excellent multiple quantum well type epitaxial layer consisting of sufficiently thin layers by a method wherein a liquid phase growth method is performed under the condition wherein a substrate is always slidingly moved in a specific solution. CONSTITUTION:The InP substrate 8 provided on a base stand 7 is slidingly moved in the direction as shown by the arrow in the diagram, and after it is brought in a standstill state at the point directly below the melt-back solution 1 for the prescribed period (ordinarily several seconds), the substrate 8 is slidingly moved again in the direction of the arrow at the prescribed constant speed V, and an InP epitaxial layer is formed in the above-mentioned period. An InGaAsP epitaxial layer is formed when the substrate passes through an InGaAsP melted solution 3, an InP epitaxial layer is formed when the substrate passes through an InP melt solution 4, and the sliding movement of the substrate is stopped at the point directly below a dummy melt layer 11. A multiple quantum well type epitaxial layer is sufficiently formed into a thin layer can be formed on the substrate by repeating the above-mentioned operation. |
