| 摘要 |
PURPOSE:To form two kinds of different spots by forming a semiconductor laser of which the light source is formed with a laser having one luminous point and laser having plural pieces of luminous points on the same substrate in a manner as to permit independent driving of the respective lasers. CONSTITUTION:The semiconductor laser is formed with one laser of an ordinary internal stripe type having one luminous point and the laser of the phase synchro nization type formed with three internal stripe type lasers in proximity to each other at several mum intervals on the same substrate. An n-GaAs layer 2 is formed on the p-GaAs substrate 1, then grooves are formed by reactive ion etching, etc. A p-Al0.4Ga0.6As layer 3, an Al0.1Ga0.9As active layer 4, an n-Al0.4- Ga0.6As layer 5 and an n-GaAs layer 6 are again successively formed by a liquid phase crystal growth method. After an n side electrode 7 and a p side electrode 8 are formed, grooves 9 are provided between the respective laser elements by chemical etching, etc. to separate the lasers, by which the indepen dent driving of the respective lasers is made possible. |
