| 摘要 |
PURPOSE:To reduce the effects given to semiconductor substrate even when the characteristic of the element-isolating region of an Si oxide film are deteriorated by irradiation with radioactive rays, by a method wherein the junction exposed to the semiconductor surface or the outer periphery of a thick insulation film is covered with a high-resistant material, the surface of which is covered with an oxide film. CONSTITUTION:In the case of a MOS transistor, the neighborhood of an outer peripheral boundary 34 where a source or drain diffused layer 34 is exposed to the surface of a semiconductor substrate 31 is covered with a high-resistant material 30, and its outer periphery is covered with an oxide film 32' of high- resistant material. Such a structure makes deterioration due to electron-hole pairs more difficult to generate than in the case of the direct contact of the oxide film, because of the cover of the neighborhood of each junction with a high-resistant material, even when the inside of the oxide film or the neighborhood of the interface between this film and the substrate is deteriorated by electron-hole pairs generated in the oxide film under radiation environment. Covering the surface of the high-resistant material 30 with the oxide film 32' is done to reduce the effects in conductivity of this material 30. |
