| 摘要 |
PURPOSE:To obtain an element wafer having mechanically and electrically desirable bonding properties, by closely contacting a mirror-polished group IV semiconductor substrate and a compound semiconductor substrate by their polished surfaces in a clean atmosphere and heat-treating them at a temperature of 200 deg.C or higher. CONSTITUTION:A mirror-polished group IV semiconductor substrate 11 and a mirror- polished compound semiconductor substrate 12 are closely contacted with each other by their polished surface in a clean atmosphere without any foreign matter interposed therebetween, and heat treated at a temperature of 200 deg.C or higher so that they are integrated. For example, an n-type Si substrate 11 and a p-type GaAs substrate 12 which are both mirror-polished and contacted with and bonded to each other by their polished surfaces in a clean atmosphere, after subjected to pretreatments such as degreasing, water washing and drying. The bonded substrates are heat treated in hydrogen gas at a temperature of 550 deg.C for 1hr, whereby a rigidly bonded diode wafer is obtained. The diode wafer thus obtained is provided with AuSb alloy which is vapor deposited on the Si side and with AuZn alloy which is vapor deposited on the GaAs side, and further heat-treated in a hydrogen atmosphere at 500 deg.C for 1hr, whereby electrodes 13 and 14 are provided. |
