| 摘要 |
PURPOSE:To join compound semiconductor layers each having a desired impurity concentration and a desired thickness to provide a joint body having desirable electric characteristics in spite of mismatched grating constants, by contacting two mirror-polished compound semiconductor substrates with each other in a clean atmosphere, and heat treating them for integration. CONSTITUTION:An Si-doped 111 n-type GaAs substrate 11 (with an impurity concentration of 10<16>/cm<3>) which is mirror polished and a Zn-doped 111 p-type InP substrate 12 (with an impurity concentration of 10<18>/cm<3>) which is also mirror polished are boiled in trichlene to be degreased. The GaAs substrate 11 is then boiled in concentrated hydrochloric acid for 2min, washed with water and spinner dried. The InP substrate 12 is dipped in a solution of H2SO4:H2O2:H2 O=1:1:4 (volume ratio) at 30 deg.C for 2-3min, washed with water and spinner dried. The substrates pretreated in these ways are contacted with each other to be bonded together within a clean room of Class 1. The bonded body thus obtained is heat-treated in a hydrogen furnace for 1hr at 450 deg.C to provide a rigid joint body.
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