| 摘要 |
PURPOSE:To improve the etchability of the Al or Al alloy film over a wafer, by a method wherein, after introduction of a chlorine series gas into a chamber, discharge is started before the gas and pressure in the chamber are stabilized. CONSTITUTION:An SiO2 film is deposited over a semiconductor substrate 11 by CVD, and an Al film 13 of 8,000Angstrom thickness is deposited over this SiO2 film 12 by sputtering; thereafter, a resist pattern 14 is formed over the l film 13 by photoetching, resulting in the preparation of a sample 15. Such a sample 15 is set up on the lower electrode 3, and vacuum is drawn via exhaust tube 6. Besides, after supply of a chlorine series gas through a gas introduction tube 5 into the chamber 11, discharge is immediately started by impressing a high frequency power from a high frequency power source 4 onto the lower electrode 3, thus selectively etching the portions of Al film 13 exposed out of the resist pattern 14 into an Al pattern. |
