| 摘要 |
PURPOSE:To obtain the titled device which can realize the interface between a high melting point metallic nitride film and a III-V group compound semiconductor with good reproducibility, by a method wherein a nitride film of a III-V group compound semiconductor is formed between a III-V group compound semiconductor substrate and a tungsten nitride film. CONSTITUTION:A nitride film 2 of said III-V group compound semiconductor is formed on a III-V group semiconductor substrate 1, and a tungsten nitride film 3 is formed thereon. For example, a GaAs substrate 1 with the interposal of a GaAs nitride layer 2 at the interface between this substrate 1 and a tungsten nitride film 3, which is a heat-resistant Schottky electrode, and an ohmic electrode 6 are formed, thus producing a diode. This construction can improve the reproducibility of Schottky characteristics. |
