| 摘要 |
PURPOSE:To prevent a light introducing window from being contaminated and to improve the efficiency of treating an object such as semiconductor, by introducing an inactive gas (purging gas) from one end of a small-diameter tube in the direction as the advancing direction of a laser beam, and constructing the other end of the tube to have a double structure so as to eliminate the effect to the gas flow within the chamber due to the discharge of the purging gas. CONSTITUTION:For performing the optical CVD, a glass substrate 27 is set in a chamber and then the chamber is evacuated through an exhaust port 26 by a rotary pump to 100Torr, and this pressure is maintained by an automatic pressure controller. Trimethyl aluminum vapor bubbled by H2 gas is introduced into the chamber through a gas introducing port 25. The flow rate of the gas is controlled by a mass flow controller. A pressure P3 within a collecting tube is maintained at about 80Torr by a needle valve when it is evacuated by the rotary pump through an exhaust port 23. A UV laser beam (ArF excimer laser beam) is applied to the glass substrate through a light introducing tube 21 for several tens minutes, whereby an Al thin film is formed in the region on the substrate where the UV laser beam is applied. According to this method, no fog is observed on the light introducing window (quartz). |
