| 摘要 |
PURPOSE:To improve step coverage in a step while the film thickness in a wafer is maintained uniformly by using plural targets formed to have prescribed slopes and generating plasma on the surfaces of the targets. CONSTITUTION:A sputtering electrode 5 of a sputtering device which consists of the target 2 of an axis 3 symmetrical body of rotation to be subjected to magnetron sputtering and plural magnetic field generating elements 9, 10 and forms the film onto a substrate 1 to be formed thereon with the film by the magnetron sputtering effect. The surface of the above-mentioned target facing the substrate is formed of a circular or doughnut-shaped plate and the surface combined with plural sets each consisting of part of the side face of a right circular cone having 0-90 deg. when measured from the axis 3. The above- mentioned magnetic field generating means 9, 10 are disposed concentrically around the axis 3 according to the slopes.
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