| 摘要 |
PURPOSE:To obtain the title device of uniform characteristics with good reproducibility and high yield, by a method wherein this device is constructed in BH refractive index type by enclosing an active layer with the first and second clad layers. CONSTITUTION:Above one main surface of a compound semiconductor substrate 1 having a 100 crystal face in the main surface and an uneven plane in this main surface, the first clad layer 2 of the first conductivity type, an optical waveguide layer 3, an undoped active layer 4, the second clad layer 5 of the second clad conductivity type, a cap layer 6 of the same conductivity type as that thereof are epitaxially grown in succession. It is contrived that the presence of the unevenness of the substrate 1 enables a side wall slope 2a of the (111)B crystal face to generate on both sides of a mesa, so as to sandwich it, by extension along the extending direction of this stripe mesa. An auxiliary current stricture layer 7 is partly provided with a lack 7a, and this stricture layer 7 is coated with one electrode 8 by including the inside of the lack 7. Then, this electrode 8 is joined to the cap layer 6 in an ohmic manner through the lack 7.
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