| 摘要 |
PURPOSE:To produce a diamond film having high hardness and superior char acteristics at the high rate of formation by introducing an org. compound contg. oxygen as a constituent atom into a reaction chamber together with gases for forming the diamond and by growing the diamond on a substrate in a vapor phase. CONSTITUTION:The substrate is placed in the reaction chamber, and the org. compound contg. oxygen as one or more constituent atoms such as (CH3)2O, CH3OH or CH3COOH is introduced into the chamber together with gases for forming diamond such as H2 and CH3. the molar ratio of the org. compound to H2 is preferable about 0.0001-0.5. The internal pressure of the chamber is then regulated to about 10<-5>-100 Torr, the substrate is kept at about 400-1,400 deg.C, and plasma CVD is carried out. The org. compound prevents H from intruding a film during the formation and accelerates the activation of CH4 or other hydrocarbon, so a high hardness diamond film having a low hydrogen content is formed on the surface of the substrate. The rate of deposi tion is increased and the cost of the production of the diamond film is reduced. |
