发明名称 WORD LINE DRIVING CIRCUIT
摘要 PURPOSE:To lower the word line voltage level changed from the select state to the non-select state to a low level at an elevated speed by driving the word line by making use of the properties of the MOS transistor that the input voltage level is transently stored by the gate capacitance. CONSTITUTION:When it is sensed that a row decoder output S1 is selected and the row address input is changed from the state of high voltage level of the word line 5, a pulse is applied to an input pulse signal line 12 so that the voltage level on the word line 5 starts to be lowered. When the voltage level at a central part 6 of the words line is lower than a constant voltage level, the current of charging a gate 14 of MOS transistor TR13 ceases. The gate 14 is in a floating state as long as the pulse is applied to the input signal line 12. When the pulse application to the input pulse signal line 12 ceases, the charges stored in the gate 14 are discharged through MOSTR11 so that MOSTR 13 returns to unconnected state.
申请公布号 JPS61182692(A) 申请公布日期 1986.08.15
申请号 JP19850023900 申请日期 1985.02.08
申请人 MATSUSHITA ELECTRONICS CORP 发明人 HATTA MINORU
分类号 G11C11/34;G11C8/08 主分类号 G11C11/34
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