| 摘要 |
PURPOSE:To enable an oscillation at a single longitudinal mode on nonstationary operation by applying a reverse bias to a junction section between a first clad layer and a block layer constituting a semiconductor laser device having double hetero-structure and changing a gain or an absorption coefficient at a period in the same extent as an optical wavelength to the direction of propagation of beams. CONSTITUTION:An N-type InP buffer layer 3, an InxGa1-xAsyP1-y (0.47<x<1, 0<y<1) active layer 4, a composition thereof is determined so that an oscillation wavelength extends over 1.1-1.6mum, a P-type InP first clad layer 5, and an N-type InP block layer 6 are laminated and grown in an epitaxial manner on an N-type InP substrate 2. A lattice pattern having a period of 1700-2500Angstrom is shaped on the surface of the layer 6, and a P-type InP second clad layer 7 and an N-type InP cap layer 8 are grown on the lattice pattern. A striped P-type channel 11 intruding to the layer 7 is formed to the layer 8 and used as a current path, a junction section between the layers 5 and 6 is brought to a reverse bias, and the gain of the layer 4 is lowered by a lattice, thus stabilizing an oscillation. |
