| 摘要 |
PURPOSE:To obtain a composite functional element with high yield by mirror- polishing one surface of an electronic device, facing the surface and joining the surface in a clean atmosphere. CONSTITUTION:A laser diode LD using GaInAsP 3 as an active layer is formed onto an N-type InP substrate 1, and a P-I-N type photodiode ID employing GaInAs 8 as an absorption layer is shaped onto a semi-insulating InP substrate 6. A cleavage plane in the LD and a substrate 6 surface in the PD are mirror- polished, and brought into mirror-contact 20 in a clean atmosphere and unified. The back of the substrate 1 in the LD and the side surface of the PD are mirror-polished so as to be formed in the same surface, brought into mirror- contact with an N layer 11 on a pi-type Si substrate 10, and bonded so that an insulating isolation layer 12 coincides with a boundary between the LD and the PD. A gate 15 and a source 16 for a FET for driving the LD and a gate 13 and a drain 14 for a FET for amplifying the PD are shaped onto the N layer 11. N side electrodes for each element are omitted, the optical coupling efficiency of the LD and the PD is improved, and energy is conserved largely in assembly operation. |
