| 摘要 |
PURPOSE:To dissolve and remove the unexposed part of a negative type silicone resist without deforming the exposed part by mixing ketone with alcohol or alkoxy alcohol with alcohol to prepare a developer for the resist. CONSTITUTION:A positive type resist 3 is coated on Al 2 and baked. A soln. of a polymer in xylene is spin-coated on the resist 3 and prebaked to form a negative type silicone resist layer 4. This resist layer 4 is patternwise exposed to electron beams, 5 and the unexposed part is dissolved and removed by development with a developer. The under resist 3 is etched with the remaining exposed part of the resist layer 4 as a mask to form a pattern true to the pattern of the upper resist layer 4. An Al pattern 2 true to the pattern of the resist layer 4 is then formed by chlorine plasma etching, and the resists are removed by immersion in a resist removing liq. |
