| 摘要 |
PURPOSE:To incline an SiO2 film section by performing the step of surface treating with mixed solution of ammonia water and hydrogen peroxide water before coating a resist. CONSTITUTION:An SiO2 film 1 is formed on an Si wafer 2, a sample is dipped in mixed solution 11 of ammonia water and hydrogen peroxide water to be surface treated. Then, a resist 3 is coated, and the pattern of a photomask 4 is projected. After developing, the film 1 is selectively etched. When the surface treatment is performed in the solution 11, the film 1 is slightly removed, and ammonia group is adhered to the surface of the wafer. When the resist 3 is coated in this state, the sealability between the film 1 and the resist 2 is deteriorated by the influence of ammonia group. Thus, when selectively etching, the film 1 is laterally etched obliquely. Accordingly, the section 12 has an oblique. The section of the film 1 can be inclined by this method so that a metal film formed thereon is not disconnected in the section. |
