发明名称 |
PROCESS FOR FABRICATING A DEVICE |
摘要 |
Process for fabricating a device, including etching of a substrate with a chlorine-containing plasma. By adjusting the AC field conditions, e.g., by grounding the environment of the substrate being etched, a significant increase in etch selectivity is achieved. By applying a similar AC field adjustment to the reaction chamber surfaces, excellent etch uniformity is achieved in conjunction with excellent selectivity. |
申请公布号 |
WO8603887(A3) |
申请公布日期 |
1986.08.14 |
申请号 |
WO1985US02392 |
申请日期 |
1985.12.04 |
申请人 |
AMERICAN TELEPHONE & TELEGRAPH COMPANY |
发明人 |
ALEXANDER, FRANK, BERNARD, JR.;FOO, PANG-DOW;SCHUTZ, RONALD, JOSEPH |
分类号 |
H01L21/302;C23F4/00;H01L21/3065;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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