发明名称 TREATING METHOD AND DEVICE OF WAFER
摘要 PURPOSE:To prevent atmospheric air from invading by conveying wafers into a reaction tube so that gas atmosphere used for inert gas or treating gas is provided around and between the wafers. CONSTITUTION:A door 13 is closed, and N2 gas is flowed from a pipe 12 toward the interior B of a furnace in the state that a reaction tube 4 is closed. When the door 13 is opened, and the gas is flowed from the interior B through a pipe 16 to a furnace port A. Further, the N2 gas is injected from a hole 6 toward the surroundings of and between the wafers. A fork 3 which places a jig 2 for holding a wafer 1 is moved to convey the jig 2 to the prescribed position. The jig 2 is placed on the inner wall of the tube 4, and the fork 3 is moved backward out of the furnace. The gas from the hole 6 is stopped, and the door 13 is stopped. At this time, the gas from the pipes 12, 16 is stopped, a valve is opened to evacuated in vacuum by a vacuum pump 14. Thus, the effect of the atmospheric air is removed to stably treat the surface of the wafer.
申请公布号 JPS61182218(A) 申请公布日期 1986.08.14
申请号 JP19850021767 申请日期 1985.02.08
申请人 HITACHI HOKKAI SEMICONDUCTOR KK;HITACHI LTD 发明人 ENDO TORU
分类号 H01L21/205;H01L21/22;H01L21/31 主分类号 H01L21/205
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