| 摘要 |
PURPOSE:To obtain a unified device by directly bringing mirror surfaces into contact mutually in a semiconductor substrate, on the surface thereof a light- emitting or light-receiving element being formed and the surface thereof being mirror-processed, and semiconductor substrate, on the surface thereof an electronic element being shaped and the surface thereof being mirror-processed. CONSTITUTION:The upper surface of an N-GaAs substrate 11 is mirror-polished to roughness of 500Angstrom or less, N-Ga0.65Al0.35As 12, a non-added GaAs active layer 13, P-Ga0.65Al0.35As 14 and N-GaAs 15 are superposed through a MOCVD method, etc., and Zn is diffused to form a striped P-GaAs connecting layer 16. A laser base body 10 with a resonator and surface 18 in the vertical direction to the layer 16 is formed through RIE. An electronic device is shaped to an Si substrate 19, the surface thereof takes a P-type, and the substrate 19 is mirror-processed to the same surface roughness. Mirror surfaces are substituted by methanol and dried by 'Freon(R)'. bonded mutually in an atmosphere of the quantity of floating of dust of 20 pcs/m<3> or less, treated at 200 deg.C or higher and joined firmly. According to the constitution, the characteristics of a laser and the electronic device can each be optimized, thus simply acquiring an integrated unified device having high reliability. |
