| 摘要 |
PURPOSE:To obtain a large output signal with a high accuracy for a unilateral pressure force, by allowing the transmission of a pressing force only to the pressure receiving sections from the pressurizing side. CONSTITUTION:Four arms 12 orthogonal to one another are formed by making holes 11 in a silicon monocrystal plate 10 and pressure receiving sections 13 supported with these arms 12 are formed. Four semiconductor strain gauges 14 are formed on the surfaces of the respective arms 12 by a semiconductor process. Moreover, a lead 15 is formed by the same semiconductor process to build a bridge circuit between the four semiconductor strain gauges 14 and unit detectors 16 for pressure detection thus arranged are arranged in matrix on a silicon monocrystalline plate 10. Here, the length-wise stress sigma generated on the undersurface of the arms 12 when the force in the direction of the arrow is applied to the pressure receiving section 13 is given close to the pressure receiving section 13 as tensile stress and close to the outside periphery of the holes 11 as compression stress. |
