| 摘要 |
PURPOSE:To enable the measurement of the depth-wise distribution of impurities and the depth-wise distribution of site in a matrix crystal by collecting auger electrons from impurities in stead of backscattered ions as signal from a sample with the incidence of a highly accelerated primary ion. CONSTITUTION:A sample 12 is GaAs as obtained by ion implantation of Si and <110> as the direction of channelling a zinc-blende structure is turned to incident beam. An auger electron detector 14 is designed to move with a sample base 13 and allowed for the sample 12 at a fixed angle and a low-speed ion etching gun 15 is interlocked with the sample 12 at a fixed angle to always perform an etching at a fixed condition. A ion gas using oxygen with a flat plane easy to obtain to keep the vacuum of a sample chamber 17 entirely surrounded by a box body 16 at 10<-10> TORR. After the annealing, the signal of Si having existed at an inter-lattice position decreases and with the annealing, the site takes place to a lattice position from the inter-lattice position of Si. Thus, depth-wise information can be obtained about the site of impurities. |
