| 摘要 |
<p>A method for growing an epitaxial layer (77) composed of semiconductor material belonging to the cubic crystal system on a substrate (71), where the lattice constant of the epitaxial layer is graded from an initial lattice constant adjacent to the substrate (71) to a final lattice constant on the surface of the epitaxial layer (77). Growth surfaces (79) are formed on the substrate, and the epitaxial layer (77) is grown as its lattice constant changes from the initial lattice constant to the final lattice constant.</p> |
