发明名称 CONTACT TYPE IMAGE SENSOR
摘要 PURPOSE:To improve characteristics by laminating a light-shielding film, a transparent electrode, P-type amorphous silicon, undoped amorphous silicon and a discrete electrode onto a glass substrate in succession from the glass substrate side, forming an openiggto the light-shielding film and projecting an optical signal from the glass substrate side. CONSTITUTION:A light-shielding film 5 consisting of chromium is shaped onto a glass substrate 6, an opening section 5a for projecting an optical signal is formed through photoetching, and a transparent electrode 4 composed of ITO or SnO2 is shaped onto the light-shielding film 5. P-type amorphous silicon 3 to which boron is doped is formed onto the transparent electrode 4 and undoped amorphous silicon 2 onto the silicon 3. Discrete electrode 2 and wirings are shaped onto the silicon 2. Accordingly, an insulating protective film formed ont a light-receiving element is thinned, thus simplifying a manufacturing process.
申请公布号 JPS61181158(A) 申请公布日期 1986.08.13
申请号 JP19850021110 申请日期 1985.02.06
申请人 NEC CORP 发明人 KUDO YASUKI
分类号 G01J1/02;H01L27/14;H01L27/146;H01L31/0248;H01L31/08 主分类号 G01J1/02
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