| 摘要 |
A method of improving film adhesion during the fabrication of thin film integrated circuits is disclosed. The method includes the steps of depositing a metallic silicide on a substrate and then implanting selected ions at predetermined doses and energies into the silicide layer, whereby tensile stress generated during fabrication processes is reduced. In one embodiment of the invention, the substrate is provided with a polycrystalline silicon layer and the silicide is of the structure MSix, where M is a refractory metal and x is greater than 2. Preferred doses range from 1015 to 1017 cm-2, while preferred energies range from 40 to 150 keV. |
