| 摘要 |
PURPOSE:To accelerate the spattering speed by a method wherein an accelerating electrode is provided between a target material and a substrate for the acceleration of an ion beam striking the target. CONSTITUTION:A spattering unit is constituted of a plate-shaped upper, lower electrodes 2, 3 positioned opposite to each other in a container 1 and a accelerating electrode 4 built of a network-structure molybdenum line positioned between said two electrodes 2, 3. A voltage of -10--100V is applied to the accelerating electrode 4 with a high-frequency power source 6 on for the simultaneous application of a high-frequency power of, for example, 1KW for the generation of electric discharge between the electrodes 2, 3. Spattering is accomplished by means of argon ions of a target material 7 upon a substrate 8 for the deposition of a silicon oxide film. |
