| 摘要 |
PURPOSE:To prevent the creeping-up of conductive adhesives, and to obviate the short circuit of a P-N junction by forming a stepped section to the side wall of a semiconductor layer in the lower section of a P-N junction section. CONSTITUTION:A P-type semiconductor layer 2 consisting of GaAsP is formed onto an N-type semiconductor 1 composed of GaAlAs to shape a water 3, and P-type electrodes 4... and N-type electrodes 5... consisting of Au or Al are formed onto the surface and back of the wafer 3. The wafer 3 is diced at predetermined pitches from the N-type electrode 5 side, and grooves 11... in wide width are shaped. Said wafer 3 is diced at the same pitches as the grooves 11... from the P-type electrode 4 side, and groove 12... in narrow width are formed. The wafer 3 is broken. Consequently, semiconductor light-emitting elements are obtained. Projections (stepped sections) 13 are shaped to the side walls of the N-type semiconductor layers 1 in the lower sections of P-N junctions through a breaking. Accordingly, when said light-emitting element is fixed to a stem 8 with conductive adhesives 7 such as Ag paste, the creeping-up of Ag paste can be prevented by the projections 13, thus avoiding the short circuit of the P-N junction. |
