Method of manufacturing a thyristor.

摘要

Disclosed is a method of manufacturing a thyristor having a base layer comprising impurity layers which are bonded to each other, comprising the steps of bringing a first semiconductor substrate (11) having a first impurity layer (12) whose surface is mirror-polished into contact with a second semiconductor substrate (13) whose surface is mirror-polished and which is of the same conductivity type as the first impurity layer (12), so that the mirror-polished surfaces are in contact with each other, and in a pure atmosphere so that virtually no foreign substances are present therebetween, and annealing the first and second semiconductor substrates whose mirror-polished surfaces are in contact with each other at a temperature of not less than 200 DEG C so as to bond the mirror-polished surfaces together, thereby forming the base layer consisting of the impurity layer and the second semiconductor substrate.