Improved photovoltaic device tolerant of low resistance defects.

摘要

An improved photovoltaic device (10, 10 sec , 10''') exhibiting increased tolerance of low resistance defects includes a substrate (14) having a semiconductor body (12) disposed on it, a bus grid current collecting structure (22) disposed upon the semiconductor body and a transparent conductive electrode (32) overlying at least a portion of the semiconductor body. A layer of relatively high resistivity material (29, 29 min , 29 sec ) is disposed within the structure to restrict current from flowing directly between the substrate and the bus grid structure through a low resistance defect current path. The high resistivity layer may be disposed on the semiconductor body beneath the transparent electrode or on the substrate and in contact with the semiconductor body. In the former case, the transparent electrode may be interposed between the bus grid structure and high resistivity material or may be disposed on top of the bus grid structure. Preferably, the high resistivity layer is formed into a pattern corresponding to at least a portion of the bus grid structure and in registration with it.