| 发明名称 |
Method of manufacturing compound semiconductor apparatus. |
| 摘要 |
<p>A method of manufacturing a compound semiconductor device has the steps of mirror-polishing a surface of each of two compound semiconductor substrates (11, 12), bringing the mirror-polished surfaces of the two compound semiconductor substrates (11, 12) in contact with each other in a clean atmosphere and in a state wherein substantially no foreign substances are present therebetween, and annealing the compound semiconductor substrates (11, 12) which are in contact with each other so as to provide a bonded structure having a junction with excellent electrical characteristics at the interface.</p> |
| 申请公布号 |
EP0190508(A2) |
申请公布日期 |
1986.08.13 |
| 申请号 |
EP19850309449 |
申请日期 |
1985.12.23 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMBO, MASARU C/O PATENT DIVISION;OHASHI, HIROMICHI C/O PATENT DIVISION;FURUKAWA, KAZUYOSHI C/O PATENT DIVISION;FUKUDA, KIYOSHI C/O PATENT DIVISION |
| 分类号 |
H01L21/20;H01L21/02;H01L21/18;H01L21/306;H01L27/12;H01L29/80;H01L29/861;(IPC1-7):H01L21/18 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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