| 摘要 |
PURPOSE:To prevent the short circuit of a junction due to the creeping-up of conductive paste while obtaining sufficient die bonding strength by bonding an silicon substrate with the base of a semiconductor chip, from a side surface of which the junction is exposed, through a silver paste layer and die-conding the silicon substrate side onto a stem substrate through conductive adhesives. CONSTITUTION:A GaAlAs infrared LED has a P-type GaAlAs layer 1, an N-type GaAlAs layer 2 and an aluminum electrode 3, and an silicon substrate 12 is bonded onto the back of the P-type GaAlAs layer 1 through a silver paste layer 11. on die bonding, conductive paste 4 is applied onto a mount section in a stem substrate 5 as a mounting agent, and a LEF pellet is fixed. Conductive adhesives 4 also creep up along the side wall of the LED chip at the time. A distance up to a junction surface from the base of the chip is made longer than a conventional GaAlAs infrared LED pellet by several hundred 4mum, thus preventing the situation, in which a P-N junction is short-circuited by creeping-up conductive paste 4, approximately completely. |
