| 摘要 |
PURPOSE:To reduce gate capacitance, by ion-implanting oxygen into a portion of a polycrystalline silicon electrode to form an oxide film. CONSTITUTION:On one conductive type semiconductor substrate 1, an impurity region 2 having the other conductive type is formed. Next, a gate oxide film 3 and polycrystalline silicon 4 are grown, and an impurity region 6 having the one conductive type is formed. After a cover film 7 implanted with oxygen ions coats the entire face, windows are opened through unnecessary portions of the polycrystalline silicon 4. After oxygen ion implantation 8 is done, the implanted region is converted into an oxide film 9 by annealing. On the entire face, a CVD SiO2 film or PSG film is formed, and openings are then bored through the source region and a source electrode 10 is formed. In this way, gate capacitance of the vertical field effect transistor can thus be reduced. |
