Monolithic bipolar MOS switching device.

摘要

A semiconductor device in which, in a planar type bipolar transistor having a collector layer (22) in a substrate side, a base layer (23) formed on the collector layer (22) and an emitter island (24) formed in the base layer (23), a groove (25) is provided in the emitter island (24) to mach at least the interface between the base layer (23) and the collector layer (22) to form a conductive film (27) through a dielectric film (26) in the groove as to be employed as a gate electrode of a MOS-FET thereby to implement a monolthic parallel Bi-MOS device, while the base electrode (28) of the bipolar transistor (40) and the gate electrode (29) of the MOS-FET (50) are connected with a help of diodes including a zener diode (10) thereby to implement a monolithic three-terminal parallel Bi-MOS switching device of small chip size.