| 摘要 |
PURPOSE:To improve the non-uniformity in the degree of supersaturation of an In solution and thereby to eliminate the non-uniformity in a speed of growth to an InP substrate, by putting a plurality of InP crystals on the In solution. CONSTITUTION:In 12 and InP crystals 13 are put in a bath 11 of a carbon boat, a push lid 14 is set, and temperature is raised and kept high for a pre scribed time so that InP is dissolved sufficiently in the In solution 12. When the temperature is lowered for the entire boat in the above state, P turning surplus in the In solution 12 is educed in the solid-phase InP crystals 13. When the temperature continues to be lowered further at a prescribed speed, the degree of super-saturation of P in the InP solution 12 turns to have a distribu tion which is decided by a distance from the solid-phase InP crystals 13. When an InP substrate 16 set on a substrate holder 15 is moved to the lower part of the InP solution 12 in the above condition, an epitaxial growth occurs and proceeds on the InP substrate 16. In the case when a plurality of InP crystals 13 are on the InP solution 12, accordingly, the non-uniformity in the distance from the solid phase lessens in comparison with the case of presence of one InP crystal, and the non-uniformity in the degree of supersaturation also lessens. |
