VAPOR PHASE EPITAXIAL GROWTH EQUIPMENT

摘要

PURPOSE:To make crystal growth easy forming smooth gas flow by a method wherein a columnar carbon susceptor is made symmetrical with respect to the central axis of a furnace core pipe while a pyramidal through hole is provided inside the susceptor. CONSTITUTION:A pyramidal through hole 8 tapering from one end to the other end of a column is made inside a high-frequency heating columnar carbon susceptor 7. A substrate 5 is arranged on a pyramidal plane inside the susceptor 7. Material gas fed from a material gas feed port 6 expanding almost symmetrically with respect to the central axis of a furnace core pipe 4 therein subject to no change of flowing can flow smoothly upon the surface of substrate 5. Through these procedures, extremely homogeneous epitaxial crystal may be grown upon overall surface of the substrate 5.