发明名称 |
DISPOSITIVO SEMICONDUTTORE PER LIMITARE LA POTENZA ELETTRICA AD ALTA FREQUENZA |
摘要 |
An H.F. power limiter comprises a monocrystalline semiconductor layer 2 provided on an insulating substrate 1. Two diodes 3, 2 are arranged back to back beside each other. The thickness and the doping concentration of the semiconductor layer 2 are so small that upon applying a reverse voltage across a diode the depletion zone extends throughout the thickness of the semiconductor layer even at a voltage which is lower than the breakdown voltage. <IMAGE> |
申请公布号 |
IT1134739(B) |
申请公布日期 |
1986.08.13 |
申请号 |
IT19800026678 |
申请日期 |
1980.12.16 |
申请人 |
PHILIPS GLOEILAMPENFABRIEKEN NV |
发明人 |
BINET MICHEL |
分类号 |
H01L29/872;H01L27/08;H01L27/12;H01L29/47;H01L29/861;H03G11/02 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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