| 摘要 |
PURPOSE:To detect information having excellent balance properties and high sensitivity by using a dummy cell of the same form as a memory cell and therefore eliminating an unbalanced state between paired digit lines due to the activation of a word line. CONSTITUTION:Memory cells 10 and 11 and dummy cells 12 and 13 form 1-transistor type cells on the same surface of a substrate and in the same gyometric shape. The digit lines D and -D and sense nodes A and B are precharged by the power supply voltage VP of about a middle level compared with the power supply voltage VD with pulses phiP and phiT. When the detection of signals is started, a drive pulse phiW of a word line and a drive pulse phiDW of a dummy word line are set at high potentials. Then the transistors of a memory cell at one side and a dummy cell at the other side conduct. Thus the potentials of the digit lines and nodes A and B are changed, The dummy cells 12 and 13 have the same form and therefore the changes of both lines D and -D due to the activation of two word lines have the same phase and cancelled with each other.
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