| 摘要 |
<p>A driving circuit for an insulated gate bipolar transistor (IGBT) (1) which has a power source (4, 5), a gate voltage input circuit (6, 7) which supplies the voltage to a gate terminal of IGBT, a detecting circuit (16, 17, 41, 42) for detecting a collector to emitter voltage of the IGBT and an adjusting circuit (13, 14, 10, 18, 21, 44) for lowering the control signal.</p><p>When an abnormality is detected by the detecting circuit the adjusting circuit performs a dropping operation of the gate voltage of the IGBT immediately after the detection or after the passage of a predetermined time following the application of the On signal to the gate.</p> |
