| 摘要 |
<p>A HETEROSTRUCTURE COMPRISING A HETEROEPITAXIAL MULTICONSTITUENT MATERIAL The method for producing a heterostructure comprising a heteroepitaxial multiconstituent material on a substrate comprises deposition on the substrate surface at a relatively low deposition temperature of a thin disordered layer of a "template-forming" material, i.e., material containing at least one constituent of the multiconstituent material to be grown, and differing in chemical composition from at least the substrate material, raising the substrate temperature to an intermediate transformation temperature, thereby causing the templateforming material to undergo a reaction that results in formation of "template" material, typically material having substantially the same composition as the multiconstituent material to be grown. Onto the thus formed template layer is then deposited the material for the epitaxial multiconstituent layer. The inventive method has wide applicability, and permits, inter alia, growth of essentially perfect epitaxial CoSi2 or NiSi2 on Si(100). Material grown by the method can be in form of an essentially continuous layer or a patterned layer, and can serve as the substrate for the growth thereon of further epitaxial material of different chemical composition.</p> |
