| 摘要 |
<p>In a LOCOS process, depressions (11) are formed, which are filled afterwards by means of oxidation. Beforehand, the bottom (12) and the walls (13) of the depression (11) are coated with a double layer of oxide (14) and oxidation-resistant material (15). This double layer is removed from the bottom (12), which results in that along the walls (13) under the oxidation-resistant layer (15) cavities (18) are formed by under-etching, which facilitate the supply of oxidants, as a result of which the remaining parts (9) of the oxidation-resistant material are lifted as it were. Especially with oblique walls of the depression, a high accuracy to size of the active semiconductor regions (4) can then be obtained with respect to the original mask (10).</p> |
