| 发明名称 |
Fet charge sensor and voltage probe |
| 摘要 |
A MOSFET structure having a biased gate covered with an insulator of such a thickness as to render the structure capable of giving a measure of accumulated charge and usable in a stacked structure as a particle spectrometer.
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| 申请公布号 |
US4605946(A) |
申请公布日期 |
1986.08.12 |
| 申请号 |
US19840641146 |
申请日期 |
1984.08.16 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
ROBINSON, JR., PAUL A. |
| 分类号 |
G01T1/29;H01J49/02;H01J49/28;H01L29/49;H01L29/788;(IPC1-7):H01L29/78;H01L27/14 |
主分类号 |
G01T1/29 |
| 代理机构 |
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代理人 |
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| 主权项 |
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