| 摘要 |
PURPOSE:To grow an excellent epitaxial crystal, and to obtain a planar type semiconductor device having high performance by conducting all of a series of operations, such as MBE, mask-less ion implantation, etc. in a vacuum. CONSTITUTION:A non-doped GaAs layer 8 is grown on a GaAs substrate crystal 7 under the same vacuum, N-type Si ion beams are focussed, ions are implanted in a mask-less manner, and a buried conductive layer for a collector is formed. A non-doped GaAs layer 10 is grown on a sample crystal to which ions are implanted again, Si is implanted to a non-doped GaAs layer 11 to shape a leading-out conductive layer for the collector, and P-type Be is implanted to form a base layer 12. A non-doped Al0.3Ga0.7As layer 13 and a non-doped GaAs layer 14 are grown on the layer 12, Si ions are implanted to each shape a leading-out electrode 15 for the collector and an emitter 16, Be is implanted to a leading-out electrode section 17 for the base layer, and lastly an SiO2 protective film is attached onto the surface of the sample crystal and doped Si and Be are activated electrically through heat treatment, thus manufacturing a planar type hetero-junction bipolar transistor. |
