| 发明名称 |
Single transistor/capacitor semiconductor memory device and method for manufacture |
| 摘要 |
A semiconductor memory device and a method for manufacturing such a device provides increased capacitance for memory cells of a dynamic RAM by using the top and sides of island regions formed in the substrate.
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| 申请公布号 |
US4606011(A) |
申请公布日期 |
1986.08.12 |
| 申请号 |
US19850791098 |
申请日期 |
1985.10.24 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WADA, MASASHI;WATANABE, SHIGEYOSHI;MASUOKA, FUJIO |
| 分类号 |
H01L27/10;H01L21/762;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):G11C13/00 |
主分类号 |
H01L27/10 |
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