发明名称 |
APPARATUS FOR REACTING SEMICONDUCTOR WAFER WITH STEAM |
摘要 |
<p>An apparatus for reacting a semiconductor wafer with steam includes a reaction tube and a heater for heating the reaction tube. The reaction tube is divided into three chambers by partition plates having a through hole. Pure water is directly supplied into the most upstream chamber and is evaporated into steam. The steam enters the second chamber and further heated therein into superheated steam. The superheated steam enters the most downstream chamber in which a semiconductor wafer or wafers are placed, and is heated sufficiently for reaction with the wafer to form an oxide film thereon.</p> |
申请公布号 |
CA1209724(A) |
申请公布日期 |
1986.08.12 |
申请号 |
CA19830440284 |
申请日期 |
1983.11.02 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
NAGASAKA, SYUICHI;KANEKO, SIYOUKICHI |
分类号 |
H01L21/31;C04B41/50;C04B41/87;C23C8/16;C30B33/00;F22B27/00;(IPC1-7):H01L21/46 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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